Development of tunnel diode devices and models for circuit design and characterization

Historically, the microelectronics industry has scaled down CMOS transistor dimensions in order to increase operating speeds, decrease cost per transistor, and free up on-chip real estate for additional chip functions. There are numerous challenges involved with scaling transistors down to the near term 32 nm node, and beyond. These challenges include short gate lengths, very thin gate oxides, short channel effects, quantum effects, band-to-band tunneling from source to drain, Gate Induced Drain Leakage, Fowler Nordheim tunneling, and increasing dopant concentrations. Field effect transistor circuits augmented with tunnel diodes lead to decreased circuit footprints, decreased device count, improved operating speeds, and lower power consumption without the need to solve current CMOS scaling challenges. Recently, N on P Si/SiGe resonant interband tunnel diodes (RITD) have been monolithically integrated with CMOS transistors. To further improve the benefits of RITD augmented circuits, P-on-N RITDS and all-Si RITDs were developed. Reported maximum peak to valley current ratios (PVCR), a key quantitative parameter of TDs, of 1.32 and 3.02 were measured, respectively. Since integrated circuits operate at elevated temperatures, the I-V characteristics of various TDs were measured at temperatures ranging from room temperature up to 200oC. Three figures of merit were extracted; (i) peak current density (JP), (ii) valley current density (JV), and (iii) PVCR. Normalizing over their respective values at room temperature allowed for direct comparison between the various TD structures. This method allowed the author to determine that all devices show a similar JP response. However, the Si/SiGe RITD structure was overall least sensitive to temperature variations. Furthermore, to design and optimize TD augmented circuits, a SPICE compatible model was developed. Past models have discontinuities, kinks in their slopes, difficult parameters to extract, unknown parameters, no closed form solutions, and/or poor fits to measured data. For this work a modified version of the S. M. Sze model with a superior match to experimental data, for Si based Esaki tunnel diodes (ETD) was developed. Using the developed model, several circuits were simulated, which were broken up into two groups. The first group of circuits is comprised of one TD and one of the following; (i) resistor, (ii) NMOS transistor, or (iii) TD. Finally, the behaviors learned from the simple circuits were used to simulate several TD augmented circuits such as (i) ADC comparator, (ii) TSRAM, (iii) and four basic logic gates

Field Induced Band-to-Band Tunneling Effect Transistor (FIBTET)

A field Induced Band to Band Tunneling Effect Transistor was designed, fabricated and tested. The devices are to take the shape of finFETs and plainer devices i~hich will employ mesa isolation technology. Degenerate dopings were achieved through the use of proximity diffusion in a rapid thermal processing tool. Final results include design parameters, fabrication parameters, fabrication techniques, SEM Images, electrical test results & analysis, and areas of continuing work

Comprehensive Mapping and Benchmarking of Esaki Diode Performance

The tunneling-FET (TFET) has been identified as a prospective MOSFET replacement technology with the potential to extend geometric and electrostatic scaling of digital integrated circuits. However, experimental demonstrations of the TFET have yet to reliably achieve drive currents necessary to power large scale integrated circuits. Consequentially, much effort has gone into optimizing the band-to-band tunneling (BTBT) efficiency of the TFET. In this work, the Esaki tunnel diode (ETD) is used as a short loop element to map and optimize BTBT performance for a large design space. The experimental results and tools developed for this work may be used to (1) map additional and more complicated ETD structures, (2) guide development of improved TFET structures and BTBT devices, (3) design ETDs targeted BTBT characteristics, and (4) calibrate BTBT models. The first objective was to verify the quality of monolithically integrated III-V based ETDs on Si substrates (the industry standard). Five separate GaAs/InGaAs ETDs were fabricated on GaAs-virtual substrates via aspect ratio trapping, along with two companion ETDs grown on Si and GaAs bulk substrates. The quality of the virtual substrates and BTBT were verified with (i) very large peak-valley current ratios (up to 56), (ii) temperature measurements, and (iii) deep sub-micron scaling. The second objective mapped the BTBT characteristics of the In1-xGaxAs ternary system by (1) standardizing the ETD structure, (2) limiting experimental work to unstrained (i) GaAs, (ii) In0.53Ga0.47As, and (iii) InAs homojunctions, and (3) systematically varying doping concentrations. Characteristic BTBT trendlines were determined for each material system, ranging from ultra-low to ultra-high peak current densities (JP) of 11 μA/cm2 to 975 kA/cm2 for GaAs and In0.53Ga0.47As, respectively. Furthermore, the BTBT mapping results establishes that BTBT current densities can only be improved by ~2-3 times the current record, by increasing doping concentration and In content up to ~75%. The E. O. Kane BTBT model has been shown to accurately predict the tunneling characteristics for the entire design space. Furthermore, it was used to help guide the development of a new universal BTBT model, which is a closed form exponential using 2 fitting parameters, material constants, and doping concentrations. With it, JP can quickly be predicted over the entire design space of this work

Force Limit System

The Force Limit System (FLS) was developed to protect test specimens from inadvertent overload. The load limit value is fully adjustable by the operator and works independently of the test system control as a mechanical (non-electrical) device. When a test specimen is loaded via an electromechanical or hydraulic test system, a chance of an overload condition exists. An overload applied to a specimen could result in irreparable damage to the specimen and/or fixturing. The FLS restricts the maximum load that an actuator can apply to a test specimen. When testing limited-run test articles or using very expensive fixtures, the use of such a device is highly recommended. Test setups typically use electronic peak protection, which can be the source of overload due to malfunctioning components or the inability to react quickly enough to load spikes. The FLS works independently of the electronic overload protection

Contact Thermocouple Methodology and Evaluation for Temperature Measurement in the Laboratory

Laboratory testing of advanced aerospace components very often requires highly accurate temperature measurement and control devices, as well as methods to precisely analyze and predict the performance of such components. Analysis of test articles depends on accurate measurements of temperature across the specimen. Where possible, this task is accomplished using many thermocouples welded directly to the test specimen, which can produce results with great precision. However, it is known that thermocouple spot welds can initiate deleterious cracks in some materials, prohibiting the use of welded thermocouples. Such is the case for the nickel-based superalloy MarM-247, which is used in the high temperature, high pressure heater heads for the Advanced Stirling Converter component of the Advanced Stirling Radioisotope Generator space power system. To overcome this limitation, a method was developed that uses small diameter contact thermocouples to measure the temperature of heater head test articles with the same level of accuracy as welded thermocouples. This paper includes a brief introduction and a background describing the circumstances that compelled the development of the contact thermocouple measurement method. Next, the paper describes studies performed on contact thermocouple readings to determine the accuracy of results. It continues on to describe in detail the developed measurement method and the evaluation of results produced. A further study that evaluates the performance of different measurement output devices is also described. Finally, a brief conclusion and summary of results is provided

E-Type Delayed Fluorescence of a Phosphine-Supported Cu_2(μ-NAr_2)_2 Diamond Core: Harvesting Singlet and Triplet Excitons in OLEDs

A highly emissive bis(phosphine)diarylamido dinuclear copper(I) complex (quantum yield = 57%) was shown to exhibit E-type delayed fluorescence by variable temperature emission spectroscopy and photoluminescence decay measurement of doped vapor-deposited films. The lowest energy singlet and triplet excited states were assigned as charge transfer states on the basis of theoretical calculations and the small observed S_1−T_1 energy gap. Vapor-deposited OLEDs doped with the complex in the emissive layer gave a maximum external quantum efficiency of 16.1%, demonstrating that triplet excitons can be harvested very efficiently through the delayed fluorescence channel. The function of the emissive dopant in OLEDs was further probed by several physical methods, including electrically detected EPR, cyclic voltammetry, and photoluminescence in the presence of applied current

The evolution of post-starburst galaxies from z=2 to 0.5

We present the evolution in the number density and stellar mass functions of photometrically selected post-starburst galaxies in the UKIDSSUltraDeep Survey,with redshifts of 0.510. We find that this transitionary species of galaxy is rare at all redshifts, contributing ∼5 per cent of the total population at z ∼ 2, to <1 per cent by z ∼ 0.5. By comparing the mass functions of quiescent galaxies to post-starburst galaxies at three cosmic epochs, we show that rapid quenching of star formation can account for 100 per cent of quiescent galaxy formation, if the post-starburst spectral features are visible for ∼250 Myr. The flattening of the low-mass end of the quiescent galaxy stellar mass function seen at z ∼ 1 can be entirely explained by the addition of rapidly quenched galaxies. Only if a significant fraction of post-starburst galaxies have features that are visible for longer than 250 Myr, or they acquire new gas and return to the star-forming sequence, can there be significant growth of the red sequence from a slower quenching route. The shape of the mass function of these transitory post-starburst galaxies resembles that of quiescent galaxies at z ∼ 2, with a preferred stellar mass of log (M/M�) ∼10.6, but evolves steadily to resemble that of star-forming galaxies at z /~ 2 they are exclusively massive galaxies that have formed the bulk of their stars during a rapid assembly period, followed by complete quenching of further star formation; (2) at z </~1 they are caused by the rapid quenching of gas-rich star-forming galaxies, independent of stellar mass, possibly due to environment and/or gas-rich major mergers

Numerical modelling of Tb3+ doped selenide-chalcogenide multimode fibre based spontaneous emission sources

A model is developed of a terbium (III) ion doped selenide chalcogenide glass fibre source that provides spontaneous emission within the mid-infrared (MIR) wavelength range. Three numerical algorithms are used to calculate the solution and compare their properties

Experimental and numerical investigation to rationalize both near-infrared and mid-infrared spontaneous emission in Pr3+ doped selenide-chalcogenide fiber

This contribution reports on detailed experimental and numerical investigations of both near-infrared (NIR) and mid-infrared (MIR) photoluminescence obtained in praseodymium trivalent ion doped chalcogenide-selenide glass fiber. The experimental analysis allows for the identification of the radiative transitions within the praseodymium ion energy level structure to account for the photoluminescent behavior. Numerical analysis is carried out using the rate equations’ approach to calculate the level populations. The numerical analysis provides further insight into the nature of the radiative transitions in the Pr3+ ion doped chalcogenide-selenide glass and allows for the identification of the electronic transitions, which contribute to the observed photoluminescence. The numerical results agree well with the experimental results

Enriched biodiversity data as a resource and service

Background: Recent years have seen a surge in projects that produce large volumes of structured, machine-readable biodiversity data. To make these data amenable to processing by generic, open source “data enrichment” workflows, they are increasingly being represented in a variety of standards-compliant interchange formats. Here, we report on an initiative in which software developers and taxonomists came together to address the challenges and highlight the opportunities in the enrichment of such biodiversity data by engaging in intensive, collaborative software development: The Biodiversity Data Enrichment Hackathon. Results: The hackathon brought together 37 participants (including developers and taxonomists, i.e. scientific professionals that gather, identify, name and classify species) from 10 countries: Belgium, Bulgaria, Canada, Finland, Germany, Italy, the Netherlands, New Zealand, the UK, and the US. The participants brought expertise in processing structured data, text mining, development of ontologies, digital identification keys, geographic information systems, niche modeling, natural language processing, provenance annotation, semantic integration, taxonomic name resolution, web service interfaces, workflow tools and visualisation. Most use cases and exemplar data were provided by taxonomists. One goal of the meeting was to facilitate re-use and enhancement of biodiversity knowledge by a broad range of stakeholders, such as taxonomists, systematists, ecologists, niche modelers, informaticians and ontologists. The suggested use cases resulted in nine breakout groups addressing three main themes: i) mobilising heritage biodiversity knowledge; ii) formalising and linking concepts; and iii) addressing interoperability between service platforms. Another goal was to further foster a community of experts in biodiversity informatics and to build human links between research projects and institutions, in response to recent calls to further such integration in this research domain. Conclusions: Beyond deriving prototype solutions for each use case, areas of inadequacy were discussed and are being pursued further. It was striking how many possible applications for biodiversity data there were and how quickly solutions could be put together when the normal constraints to collaboration were broken down for a week. Conversely, mobilising biodiversity knowledge from their silos in heritage literature and natural history collections will continue to require formalisation of the concepts (and the links between them) that define the research domain, as well as increased interoperability between the software platforms that operate on these concepts